| PART |
Description |
Maker |
| 1SS193 E000243 |
From old datasheet system
ULTRA HIGH SWITCHING APPLICATION
DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SC3437 E000848 |
NPN EPITAXIAL TYPE (ULTRA HIGH SPEED SWITCHING/ COMPUTER/ COUNTER APPLICATIONS)
From old datasheet system
ULTRA HIGH SPEED SWITCHING APPLICATIONS COMPUTER, COUNTER APPLICATIONS
NPN EPITAXIAL TYPE (ULTRA HIGH SPEED SWITCHING, COMPUTER, COUNTER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
|
| GDMBD2004 |
The GDMBD2004 is designed for ultra high speed switching
SURFACE MOUNT,SWITCHING DIODE
|
E-Tech Electronics LTD
GTM CORPORATION
|
| GBAV152 |
The GBAV152 is designed for ultra high speed switching application
SURFACE MOUNT,SWITCHING DIODE
|
E-Tech Electronics LTD
GTM CORPORATION
|
| CFD444811 CFD4448-15 |
SURFACE MOUNT ULTRA HIGH SPEED
SURFACE MOUNT ULTRA HIGH SPEED SILICON SWITCHING DIODE
|
Central Semiconductor Corp
Central Semiconductor C...
|
| KTK5131S |
SMOS FET/ Analog Switch Application
N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING, ANALOG SWITCH)
N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING ANALOG SWITCH)
N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING/ ANALOG SWITCH)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| L1SS184LT1G |
Ultra High Speed Switching Application
|
Leshan Radio Company
|
| 1SS226 |
Ultra High Speed Switching Application
|
Yea Shin Technology Co....
|
| 1SS344 |
ULTRA HIGH SPEED SWITCHING APPLICATION
|
Guangdong Kexin Industrial Co.,Ltd
|
| 1SS30807 |
Ultra High Speed Switching Applications
|
Toshiba Semiconductor
|
| 1SS34407 |
Ultra High Speed Switching Application
|
Toshiba Semiconductor
|
| 1SS361F |
Ultra High Speed Switching Applications
|
Toshiba Semiconductor
|
